Publications


Publications since 2008

Peer-reviewed articles

  1. S. Morita, J. Liang, and N. Shigekawa, "Electrical Characteristics of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using Surface Activated Bonding", ECS Trans. 86 (5) pp. 137-142 (2018). DOI: 10.1149/08605.0137ecst [Reviewed Electrochemical Soc. Conference Proceedings]
  2. Jianbo Liang, Shoji Yamajo, Martin Kuball, and Naoteru Shigekawa, "Room-temperature direct bonding of diamond and Al", Scripta Mater. 159, pp. 58-61 (2019) (4 pages, DOI: 10.1016/j.scriptamat.2018.09.016).
  3. Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Kenji Araki, Takefumi Kamioka, and Naoteru Shigekawa, "Electrical properties of GaAs//indium tin oxide/Si junctions for III-V-on-Si hybrid multijunction cells", Jpn. J. Appl. Phys. 57, 08RD05 (2018) (6 pages) (DOI: 10.7567/JJAP.57.08RD05).
  4. Naoteru Shigekawa, Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Takefumi Kamioka, Kenji Araki, and Masafumi Yamaguchi, "GaAs/Indium Tin Oxide/Si Bonding Junctions for III-V-on-Si Hybrid Multijunction Cells With Low Series Resistance", IEEE J. Photovolt. 8 (3), pp. 879-886 (2018) (8 pages) (DOI: 10.1109/JPHOTOV.2018.2802203).
  5. Naoteru Shigekawa, Sae Shimizu, Jianbo Liang, Masato Shingo, Kenji Shiojima, and Manabu Arai, "Transport characteristics of minority electrons across surface-activated-bonding based p-Si/n-4H-SiC heterointerfaces", Jpn. J. Appl. Phys. 57, 02BE04 (2018) (5 pages) (DOI: 10.7567/JJAP.57.02BE04).
  6. Jianbo Liang, Tomoki Ogawa, Tomoya Hara, Kenji Araki, Takefumi Kamioka, and Naoteru Shigekawa, "Electrical conduction of Si/indium tin oxide/Si junctions fabricated by surface activated bonding", Jpn. J. Appl. Phys. 57, 02BE03 (2018) (5 pages) (DOI: 10.7567/JJAP.57.02BE03).
  7. Shoji Yamajo, Jianbo Liang and Naoteru Shigekawa, "Analysis of effects of interface-state charges on the electrical characteristics in GaAs/GaN heterojunctions", Jpn. J. Appl. Phys. 57, 02BE02 (2018) (5 pages) (DOI: 10.7567/JJAP.57.02BE02).
  8. Sho Morita, Jianbo Liang, Moeko Matsubara, Marwan Dhamrin, Yoshitaka Nishio and Naoteru Shigekawa, "Electrical properties of Al foil/n-4H-SiC Schottky junctions fabricated by surface-activated bonding", Jpn. J. Appl. Phys. 57, 02BE01 (2018) (5 pages) (DOI: 10.7567/JJAP.57.02BE01).
  9. Yutaka Ohno, Hideto Yoshida, Seiji Takeda, Jianbo Liang and Naoteru Shigekawa, "Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature", Jpn. J. Appl. Phys. 57, 02BA01 (2018) (3 pages) (DOI: 10.7567/JJAP.57.02BA01).
  10. Naoteru Shigekawa and Jianbo Liang, "Measurements of Potentials at Tap Contacts and Estimation of Resistance across Bonding Interfaces in InGaP/GaAs/Si Hybrid Triple-Junction Cells", to be published in Proc. 2017 IEEE 44th Photovoltaic Specialists Conference, Washington D.C., USA, June 25-30 (2017).
  11. Naoteru Shigekawa, Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Takafumi Kamioka, Kenji Araki and Masafumi Yamaguchi, "InGaP/GaAs/ITO/Si Hybrid Triple-Junction Cells with GaAs/ITO Bonding Interfaces", to be published in Proc. 2017 IEEE 44th Photovoltaic Specialists Conference, Washington D.C., USA, June 25-30 (2017).
  12. Naoteru Shigekawa, "Bonding of Dissimilar Semiconductor Materials for Energy-Harvesting and Energy-Saving Devices", J. Vac. Soc. Jpn. 60 (11), pp. 421-427 (2017) (7 pages) [Invited, Japanese] (DOI: 10.3131.jvsj2.60.421).
  13. Jianbo Liang, Katsuya Furuna, Moeko Matsubara, Marwan Dhamrin, Yoshitaka Nishio, and Naoteru Shigekawa, "Aluminum Foil/Si Direct Bonding as Prototypes of Ultra-Thick Metal Contacts in Devices", ECS J. Solid State Sci. Technol., 6 (9) pp. P626-P632 (2017) (7 pages) (DOI: 10.1149/2.0251709jss).
  14. Jianbo Liang, Satoshi Masuya, Makoto Kasu, and Naoteru Shigekawa, "Realization of direct bonding of single crystal diamond and Si substrates", Appl. Phys. Lett. 110, 111603 (2017) (4 pages) (DOI: 10.1063/1.4978666).
  15. J. Liang, S. Shimizu, M. Arai, and N. Shigekawa, "Determination of Band Structure at GaAs/4H-SiC Heterojunctions", ECS Trans. 75 (9) pp. 221-227 (2016). DOI: 10.1149/07509.0221ecst [Reviewed Electrochemical Soc. Conference Proceedings]
  16. J. Liang, K. Furuna, M. Matsubara, M. Dhamrin, Y. Nishio, and N. Shigekawa, "Ultra-thick metal ohmic contact fabrication using surface activated bonding", ECS Trans. 75 (9) pp. 25-32 (2016). DOI: 10.1149/07509.0025ecst [Reviewed Electrochemical Soc. Conference Proceedings]
  17. J. Liang, S. Nishida, M. Arai, and N. Shigekawa, "Improved electrical properties of n-n and p-n Si/SiC junctions with thermal annealing treatment," J. Appl. Phys. 120, 034504 (2016).
  18. M. Mitsuhara, N. Watanabe, H. Yokoyama, R. Iga, and N. Shigekawa, "Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structures grown by metalorganic molecular beam epitaxy on GaAs (100) sbstrate," J. Crystal Growth 449, 86 (2016).
  19. Li Chai, Jianbo Liang, and Naoteru Shigekawa, "Effects of annealing on the electrical characteristics of GaAs/GaAs junctions by surface-activated bonding," Jpn. J. Appl. Phys. 55, 068002 (2016).
  20. Akio Yamamoto, Kazuaki Kodama, Naoteru Shigekawa, Takashi Matsuoka, and Masaaki Kuzuhara, "Low-temperature (³ 400 ºC) growth of InN by metalorganic vapor phase epitaxy using an NH3 decomposition catalyst," Jpn. J. Appl. Phys. 55, 05FD04 (2016).
  21. Masato Shingo, Jianbo Liang, Naoteru Shigekawa, Manabu Arai, and Kenji Shiojima, "Mapping of Si/SiC p–n heterojunctions using scanning internal photoemission microscopy," Jpn. J. Appl. Phys. 55, 04ER15 (2016).
  22. Naoteru Shigekawa and Jianbo Liang, "Impacts of optical properties of anti-reflection coatings on characteristics of InGaP/GaAs/Si hybrid triple-junction cells," Proc. 2015 IEEE 42nd Photovoltaic Specialists Conference, DOI:10.1109/PVSC.2015.7356076 (2015).
  23. Jianbo Liang, Sae Shimizu, Shota Nishida, Naoteru Shigekawa, and Manabu Arai, "4H-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated Bonding," ECS Solid State Lett. 4, Q55 (2015).
  24. Akio Yamamoto, Kazuki. Kodama, Md. Tanvir Hasan, Naoteru Shigekawa, and Masaaki Kuzuhara, "MOCVD growth of thick (~1 µm) InGaN on AlN/Si substrates for InGaN/Si tandem solar cells," Jpn. J. Appl. Phys. 54, 08KA12 (2015).
  25. Naoteru Shigekawa, Jianbo Liang, Ryusuke Onitsuka, Takaaki Agui, Hiroyuki Juso, and Tatsuya Takamoto,"Current-voltage and spectral-response characteristics of surface-activated-bonding-based InGaP/GaAs/Si hybrid triple-junction cells," Jpn. J. Appl. Phys. 54, 08KE03 (2015).
  26. A. Yamamoto, Tanvir Md. Hasan, K. Kodama, N. Shigekawa, and M. Kuzuhara, "Growth temperature dependent critical thickness for phase separation in thick(~1 µm) InxGa1-xN (x=0.2-0.4)", J. Crystal Growth, 419, 64 (2015).
  27. A. Yamamoto, T. Md. Hasan, K. Kodama, N. Shigekawa, and M. Kuzuhara, "Thick (~1 µm) p-type InxGa1-xN (x~0.36) grown by MOVPE at a low temperature (~570 ºC)," Physica Stat. Solidi B, 1-4, (2015) DOI: 10.1002/pssb.201451736.
  28. Jianbo Liang, Li Chai, Shota Nishida, Masashi Morimoto and Naoteru Shigekawa, "Investigation on the interface resistance of Si/GaAs heterojunctions fabricated by surface-activated bonding," Jpn. J. Appl. Phys. 54. 030211 (2015).
  29. Masashi Morimoto, Jianbo Liang, Shota Nishida and Naoteru Shigekawa, "Effects of annealing on electrical properties of Si/Si junctions by surface-activated bonding," Jpn. J. Appl. Phys. 54, 030212 (2015).
  30. Shota Nishida, Jianbo Liang, Tomohiro Hayashi, Manabu Arai and Naoteru Shigekawa, "Correlation between the electrical properties of p-Si/n-4H-SiC junctions and cocentrations of acceptors in Si," Jpn. J. Appl. Phys. 54, 030210 (2015).
  31. N. Watanabe, M. Mitsuhara, H. Yokoyama, J. Liang, and N. Shigekawa, "Influence of InGaN/GaN multiple quantum well structure on photovoltaic characteristics of solar cell," Jpn. J. Appl. Phys. 53, 112301 (2014).
  32. J. Liang, S. Nishida, T. Hayashi, M. Arai, and N. Shigekawa, "Effects of interface state charges on the electrical properties of Si/SiC heterojunctions," Appl. Phys. Lett. 105, 151607 (2014).
  33. Naoteru Shigekawa, Li Chai, Masashi Morimoto, Jianbo Liang, Ryusuke Onitsuka, Takaaki Agui, Hiroyuki Juso, and Tatsuya Takamoto,"Hybrid Triple-Junction Solar Cells by Surface Activated Bonding of III-V Double-Junction-Cell Heterostructures to Ion-Implantation-Based Si Cells," Proc. 40th IEEE Photovoltaic Specialists Conference pp. 534-537 (2014).
  34. Naoteru Shigekawa, Jianbo Liang, Masashi Morimoto, and Shota Nishida, "Type-II Band Profile of GaAs/Si Hetero Junctions by Surface Activated Bonding for Hybrid Tandem Cells," ECS Trans. 64 (5) 235 (2014).
  35. J. Liang, S. Nishida, M. Arai, and N. Shigekawa, "Effects of thermal annealing process on the electrical properties of p+-Si/n-SiC heterojunctions," Appl. Phys. Lett. 104, 161604 (2014).
  36. N. Shigekawa, J. Liang, N. Watanabe, and A. Yamamoto, "Fabrication of nitride/Si tandem cell structures with low environmental burden by surface activated bonding," Physica Status Solidi C 11, 644 (2014).
  37. S. Nishida, J. Liang, M. Morimoto, N. Shigekawa, and M. Arai, "I-V characteristics in surface-activated bonding (SAB) based Si/SiC junctions in raised ambient temperatures", Materials Science Forum 778---780 718 (2014).
  38. N. Shigekawa, M. Morimoto, S. Nishida, and J. Liang, "Surface-activated-bonding-based InGaP-on-Si double-junction cells", Jpn. J. Appl. Phys. 53, 04ER05 (2014).
  39. A. Yamamoto, M. T. Hasan, A. Mihara, N. Shigekawa, and M. Kuzuhara, "Phase separation of thick (~1 µm) InxGa1-xN (x~0.3) grown on AlN/Si (111): Simulateneous emergence of metallic In-Ga and GaN-rich InGaN", Appl. Phys. Express 7, 035502 (2014).
  40. N. Shigekawa, J. Liang, and N. Watanabe, "Demonstration of Nitride-on-Phosphide Hybrid Tandem Solar Cells by Using Surface Activated Bonding," Proc. 39th IEEE Photovoltaic Specialists Conference pp. 2470-2473 (2013).
  41. J. Liang, T. Miyazaki, M. Morimoto, S. Nishida, and N. Shigekawa, "Electrical properties of Si/Si interfaces by using surface-activated bonding", J. Appl. Phys. 114, 183703 (2013).
  42. J. Liang, M. Morimoto, S. Nishida, and N. Shigekawa, "Band structures of Si/InGaP heterojunctions by using surface-activated bonding", Phys. Status Solidi C 10, 1644 (2013).
  43. A. Yamamoto, A. Mihara, N. Shigekawa, and N. Narita, "Marked suppression of In incorporation in heavily Si-doped InxGa1-xN (x~0.3) grown on GaN/a-Al2O3(0001) template", Appl. Phys. Lett. 103, 082113 (2013).
  44. J. Liang, S. Nishida, M. Morimoto, and N. Shigekawa, "Surface-activating-bonding-based low-resistance Si/III-V junctions", Elec. Lett. 49 (13) pp. 830-832 (2013).
  45. A. Yamamoto, A. Mihara, Y. Zheng, and N. Shigekawa, "A Comparative Study on Metalorganic Vapor Phase Epitaxial InGaN with Intermediate In Compositions Grown on GaN/Sapphire Template and AlN/Si(111) Substrate", Jpn. J. Appl. Phys. 52, 08JB19 (2013).
  46. N. Watanabe, H. Yokoyama, and N. Shigekawa, "Observation of Negative Differential Resistance in a GaN/AlGaN/GaN: Possible Tunneling Junction Using Polarization", Jpn. J. Appl. Phys. 52, 08JN03 (2013).
  47. A. Yamamoto, A. Mihara, D. Hironaga, K. Sugita, A. G. Bhuiyan, A. Hashimoto, N. Shigekawa, and N. Watanabe, "MOVPE Growth of InxGa1-xN (x~0.5) on Si(111) substrates with a pn junction on the surface", Phys. Status Solidi C10 (3) pp. 437-440 (2013).
  48. Jianbo Liang, Tatsuya Miyazaki, Masashi Morimoto, Shota Nishida, Noriyuki Watanabe, and Naoteru Shigekawa, "Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface Activated Bonding", Appl. Phys. Express 6, 021801 (2013).
  49. Noriyuki Watanabe, Haruki Yokoyama, Naoteru Shigekawa, Ken-ichi Sugita, and Akio Yamamoto, "Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells", Jpn. J. Appl. Phys. 51 (10) pp. 10ND10-1-10ND10-5 (2012).
  50. Haruki Yokoyama, Takuya Hoshi, Naoteru Shigekawa, and Minoru Ida, "Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at Low Temperature by Metalorganic Chemical Vapor Deposition", Japanese Journal of Applied Physics, 51 (2), pp. 025601-1-025601-4 (2012).
  51. Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Naoteru Shigekawa, Tadao Ishibashi, and Satoshi Kodama, "Inverted InAlAs/InGaAs Avalanche Photodiode with Low-High-Low Electric Field Profile", Japanese Journal of Applied Physics, 51 (2), pp. 02BG03-1-02BG03-4 (2012).
  52. M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata and N. Shigekawa, "Optimization of AlGaN-based spacer layer for InAlN/GaN interfaces", Physica Status Solidi (c) 9 (3-4), pp. 592-595 (2012).
  53. Ashraful G. Bhuiyan, A. Mihara, T. Esaki, K. Sugita, A. Hashimoto, A. Yamamoto, N. Watanabe, H. Yokoyama and N. Shigekawa, "MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content", Physica Status Solidi (c) 9 (3-4), pp. 670-672 (2012).
  54. M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata, and N. Shigekawa, "Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy", Journal of Applied Physics, 109 (1) pp. 013703-1-013703-8 (2011).
  55. M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata, and N. Shigekawa,"Al0.44Ga0.56N spacer layer to prevent electron accumulation inside barriers in lattice-matched InAlN/AlGaN/AlN/GaN heterostructures", Applied Physics Letters, 98 (14), pp. 142117-1-142117-3 (2011).
  56. M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata, and N. Shigekawa, "Investigation of polarization-induced electric field in ultrathin InAlN layers on GaN by X-ray photoelectron spectroscopy", Physica Status Solidi (c) 8 (7-8), pp. 2139-2141 (2011).
  57. M. Akazawa, T. Matsuyama, T. Hashizume, M. Hiroki, S. Yamahata, and N. Shigekawa, "Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy", Applied Physics Letters, 96 (13), pp. 132104-1 132104-3 (2010).
  58. Masanobu Hiroki, Narihiko Maeda, and Naoteru Shigekawa, "Compressively Strained InxAl1-xN/Al0.22Ga0.78N/GaN (x = 0.245~0.325) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers", Japanese Journal of Applied Physics 49 (4), pp. 04DF13-1-04DF13-6 (2010).
  59. Masanobu HIROKI,Narihiko MAEDA, and Naoteru SHIGEKAWA, "Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN  Heterostructures FETs on the AlN Interlayer Thickness", IEICE Transaction on Electronics, E93-C (5), pp. 579-584 (2010).
  60. Naoteru Shigekawa and Suehiro Sugitani, "Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs", IEICE Transaction on Electronics, E93-C (8), pp. 1212-1217 (2010).
  61. T. Yoshimatsu, Y. Muramoto, S. Kodama, T. Furuta, N. Shigekawa, H. Yokoyama, and T. Ishibashi, " Suppression of space charge effect in MIC-PD using composite field structure",IEE Electronics Letters, 46 (13), pp. 941-943 (2010).
  62. Naoteru Shigekawa and Suehiro Sugitani, "Numerical analysis of impact of stress in passivation films on electrical properties in Al GaN/GaN heterostructures", IEICE Electronics Express, 6 (14), pp. 1045-1050 (2009).
  63. Naoteru Shigekawa, Kazumi Nishimura, Haruki Yokoyama, and Kohji Hohkawa, "Surface Acoustic Waves in Reverse-Biased AlGaN/GaN Heterostructures", IEEE Transaction on Electron Devices, 55 (7), pp. 1585-1591 (2008).
  64. Kohji Hohkawa, Keishin Koh, Kazumi Nishimura, and Naoteru Shigekawa, "DC Variable Harmonic Pass Band Operation of AlGaN/GaN Surface Acoustic Wave Devices", Japanese Journal of Applied Physics, 47 (9), pp. 7104-7107 (2008).

Conference articles without review

  1. K. Shimozato, J. Liang, M. Arai and N. Shigekawa, "Dependence of characteristics of directly-bonded SiC/Si junctions on bonding temperature", Abstracts of 2018 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2018), Ryukoku Univ., Kyoto, Japan, June 21-22, 2018, pp. 40-41.
  2. Y. Matsumoto, S. Hisamoto, J. Liang and N. Shigekawa, "Penetration depth of effects of irradiation of Ar fast atom beams in n-Si surfaces", Abstracts of 2018 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2018), Ryukoku Univ., Kyoto, Japan, June 21-22, 2018, pp. 26-27.
  3. T. Hishida, J. Liang and N. Shigekawa, "Fabrication of Si//patterned metal layer/Si junctions for hybrid multijunction solar cells with improved bonding interface properties", Abstracts of 2018 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2018), Ryukoku Univ., Kyoto, Japan, June 21-22, 2018, pp. 24-25.
  4. Jianbo Liang, Shoji Yamajo, Martin Kuball and Naoteru Shigekawa, "Room-Temperature Direct Bonding of Diamond to Aluminum", New Diamond and Nano Carbons Conference (NDNC 2018), Flagstaff, Arizona, USA, May 20-24, 2018, A1.03.
  5. Naoteru Shigekawa, "Hybrid heterostructures and heterostructure devices fabricated by surface activated bonding technologies", Book of Abstracts, The 42nd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2018), National Institute for Research and Development in Microtechnologies –IMT Bucharest, Bucharest, Romania, May 14‐16, 2018, pp. 48-49 (Invited).
  6. Dong Liu, Jianbo Liang, Stephen Fabes, Naoteru Shigekawa and Martin Kuball, "Interfacial strength and fracture toughness in integrated semiconductor materials", Digest of Papers, 2018 International Conference on Compound Semiconductor Manufacturing Technologies (CS MANTECH 2018), Austin Texas, USA, May 7-10, 2018 2.2.
  7. Naoteru Shigekawa, "Application of surface-activated bonding technologies for III-V-on-Si hybrid multijunction cells", in EMN Singapore Meeting, Jan. 15-19, 2018, A03 (Invited).
  8. Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Kenji Araki, Takefumi Kamioka and Naoteru Shigekawa, "Annealing Effects on GaAs/ITO/Si Junctions Fabricated by Surface-Activated Bonding", in 27th International Phovoltaic Science and Engineering Conference (PVSEC-27), Lake Biwa Ohtsu Prince Hotel, Japan, Nov. 12-17, 2017, 3ThPo.117.
  9. Sanji Yoon, Jianbo Liang and Naoteru Shigekawa, "GaAs Single Junction Cells on Si Substrates Fabricated by Surface Activated Bonding and Etching of Sacrificial Layers", in 27th International Phovoltaic Science and Engineering Conference (PVSEC-27), Lake Biwa Ohtsu Prince Hotel, Japan, Nov. 12-17, 2017, 3TuPo.133.
  10. Keita Matsuura, Jianbo Liang, Koichi Maezawa and Naoteru Shigekawa, "Al-foil-based low-loss coplanar waveguides directly bonded to sapphire substrates", Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials, Sendai, Japan, Sep. 19-22, 2017, pp 495-496.
  11. Katsuya Furuna, Jianbo Liang, Moeko Matsubara, Dhamrin Marwan, Yoshitaka Nishio and Naoteru Shigekawa, "Impacts of annealing on interfaces of Al foil/Si junctions by using surface activated bonding", Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials, Sendai, Japan, Sep. 19-22, 2017, pp 387-388.
  12. Jianbo Liang, Satoshi Masuya, Makoto Kasu, Manikant Singh, Michael J. Uren, Martin Kuball and Naoteru Shigekawa, "Room temperature direct bonding of single crystal diamond and Si substrates for the combination of diamond devices with Si LSI", in 12th Topical Workshop on Heterostructure Microelectroncs (TWHM 2017), Hotel Kyocera, Kirishima, Japan, Aug. 28-31, 2017, pp. 71-72.
  13. Jianbo Liang, Takuya Nishimura, Moeko Matsubara, Marwan Dhamrin, Yoshitaka Nishio, and Naoteru Shigekawa, "Formation of contacts with high thermal tolerance by using Si/GaN junctions", in 12th International Conference on Nitride Semiconductors (ICNS12), Strasbourg, France, 24th-28th July 2017, C01.44.
  14. S. Yamajo, J. Liang, and N. Shigekawa, "Analysis of the influence of interface charges on the electrical characteristics of GaAs/GaN junctions", in Abstracts of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2017), Tokyo, Japan, May 16-18, 2017, p. 77.
  15. S. Morita, J. Liang, M. Matsubara, M. Dhamrin, Y. Nishio, and N. Shigekawa, "Electrical Properties of Al-Foil/4H-SiC Schottky Junctions Fabricated by Surface-Activated Bonding", in Abstracts of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2017), Tokyo, Japan, May 16-18, 2017, p. 68.
  16. Naoteru Shigekawa and Jianbo Liang, "Impacts of bonding-layer resistance of Si bottom cells on interface resistance in InGaP/GaAs/Si hybrid triple-junction cells", in Abstracts of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2017), Tokyo, Japan, May 16-18, 2017, p. 52.
  17. Jianbo Liang, Tomoki Ogawa, Kenji Araki, Takefumi Kamioka, Naoteru Shigekawa, "Electrical conduction of Si/ITO/Si junctions fabricated by surface activated bonding", in Abstracts of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2017), Tokyo, Japan, May 16-18, 2017, p. 51.
  18. Naoteru Shigekawa, Sae Shimizu, Jianbo Liang, Masato Shingo, Kenji Shiojima, and Manabu Arai, "Transport Characteristics of Optically-Excited and Electrically-Injected Minority Electrons across p-Si/n-SiC Hetero-Interfaces", in Abstracts of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2017), Tokyo, Japan, May 16-18, 2017, p. 26.
  19. Yutaka Ohno, Hideto Yoshida, Seiji Takeda, Liang Jianbo, and Naoteru Shigekawa, "Plane-view transmission electron microscopy of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature", in Abstracts of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2017), Tokyo, Japan, May 16-18, 2017, p. 4.
  20. Naoteru Shigekawa and Jianbo Liang, "Surface-activated Bonding of III-V Compound Semiconductors and Si for Fabricating Hybrid Tandem Solar Cells", Proc. 2017 International Conference on Electronics Packaging (ICEP 2017), Takinoyu Hotel, Tendo, Yamagata, Japan, Apr. 19-22, 2017, pp. 229-231 (Session Invited).
  21. T. Ogawa, J. Liang, S. Imasaki, T. Watanabe, D.G. Kim, and N. Shigekawa, "Effects of layered CdTe nano particles on Si solar cells", Extended Abstracts of IEEE 2016 International Meeting for Future of Electron Devices, Kansai, pp. 114-115, DOI: 10.1109/IMFEDK.2016.7521707 [IEEE Conference Publication]
  22. K.Furuna, J.Liang, N. Shigekawa, M.Matsubara, M.Dhamrin, and Y.Nishio, "Electrical characteristics of Al foil/Si junctions by surface activated bonding method", Extended Abstracts of 2016 IEEE International Meeting for Future of Electron Devices, Kansai, pp. 86-87, DOI: 10.1109/IMFEDK.2016.7521694 [IEEE Conference Publication]
  23. S.Morita, T.Nishimura, J.Liang, and N.Shigekawa, "Electrical characteristics of SAB-Based n+-n Ge/4H-SiC heterojunctions", Extended Abstracts of 2016 IEEE International Meeting for Future of Electron Devices, Kansai, pp. 74-75, DOI: 10.1109/IMFEDK.2016.7521688 [IEEE Conference Publication]
  24. S.Hisamoto, J.Liang, and N.Shigekawa, "Effects of Ar beam irradiation on Si-based Schottky contacts", Extended Abstracts of 2016 IEEE International Meeting for Future of Electron Devices, Kansai, pp. 40-41, DOI: 10.1109/IMFEDK.2016.7521671 [IEEE Conference Publication]
  25. S. Shimizu, S. Nishida, J. Liang, M. Morimoto and N. Shigekawa, "Fabrication and characterization of Si-based bipolar transistor structures using low-temperature bonding", Extended Abstracts of 2015 IEEE International Meeting for Future of Electron Devices, Kansai, (IMFEDK 2015) pp. 64-65. [IEEE Conference Publication]
  26. S. Yamajo, M. Morimoto, J. Liang and N. Shigekawa, "Interface characteristics of Si/Si junctions by using surface-activated bonding", Extended Abstracts of 2015 IEEE International Meeting for Future of Electron Devices, Kansai, (IMFEDK 2015) pp. 62-63. [IEEE Conference Publication]
  27. T. Nishimura, J. Liang, N. Shigekawa and N. Watanabe, "Electrical properties of n+-Si/n-GaN junctions by room temperature bonding", Extended Abstracts of 2015 IEEE International Meeting for Future of Electron Devices, Kansai, (IMFEDK 2015) pp. 46-47. [IEEE Conference Publication]
  28. L. Chai, J. Liang, S. Nishida, M. Morimoto and N. Shigekawa, "Electrical characterization of GaAs/GaAs bonding interfaces", Extended Abstracts of 2015 IEEE International Meeting for Future of Electron Devices, Kansai, (IMFEDK 2015) pp. 44-45. [IEEE Conference Publication]
  29. N. Shigekawa, N. Watanabe, and E. Higurashi, "Electrical Properties of Si-based Junctions by SAB", in Proc. 3rd International IEEE Workshop on Low Temperature Bonding for 3D Integration (Tokyo, Japan, 2012), pp. 109-112.



Publication before 2007

  1. Naoteru Shigekawa, Kazumi Nishimura, Tetsuya Suemitsu, Haruki Yokoyama, and Kohji Hohkawa, "SAW Filters Composed of Interdigital Schottky and Ohmic Contacts on AlGaN/GaN Heterostructures", IEEE Electron Device Letters, 28 (2), pp. 90-92 (2007).
  2. Naoteru Shigekawa, Kazumi Nishimura, Tetsuya Suemitsu, Haruki Yokoyama, and Kohji Hohkawa, "Interdigital transducers with control gates on AlGaN/GaN heterostructures", Applied Physics Letters, 89 (3), pp. 033501-1- 033501-3 (2006).
  3. K. Nishimura, N. Shigekawa, H. Yokoyama, and K. Hohkawa, "SAW characteristics of GaN with n+-GaN IDTs", IEE Electronics Letters, 42 (1), pp. 62-63 (2006).
  4. K. Shiojima, T. Makimura, T. Maruyama, T. Kosugi, T. Suemitsu, N. Shigekawa, M. Hiroki, and H. Yokoyama, "Dual-gate AlGaN/GaN high-electron-mobility transistors with short gate length for high-power mixers",Physica Status Solidi (c), 3 (3), pp. 469-472 (2006).
  5. K. Shiojima, T. Makimura, T. Maruyama, T. Suemitsu, N. Shigekawa, M. Hiroki, and H. Yokoyama, "Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs", Physica Status Solidi (c), 3 (6), pp. 2360-2363 (2006).
  6. Naoteru Shigekawa, Kazumi Nishimura, Haruki Yokoyama, and Kohji Hohkawa, "Side-gate effects on transfer characteristics in GaN-based transversal filters",Applied Physics Letters, 87 (8), pp. 084102-1-084102-3 (2005).
  7. Naoteru Shigekawa, Kazumi Nishimura, Haruki Yokoyama, and Kohji Hohkawa, "Velocity dispersion in GaN-based surface acoustic wave filters on (0001) sapphire substrates", IEICE Electronics Express, 2 (19), pp. 495-500 (2005).
  8. Pouya Valizadeh , Dimitris Pavlidis, Kenji Shiojima, Takashi Makimura, and Naoteru Shigekawa, "Low frequency noise of AlGaN/GaN MODFETs: A comparative study of surface, barrier and heterointerface effects",Solid-State Electronics, 49 (8), pp. 1352-1360 (2005).
  9. Tetsuya Suemitsu, Kenji Shiojima, Takashi Makimura, and Naoteru Shigekawa, "Intrinsic transit delay and effective electron velocity of AlGaN/GaN high electron mobility transistors", Japanese Journal of Applied Physics, 44 (6), pp. L211-L213 (2005).
  10. Kazumi Nishimura, Naoteru Shigekawa, Haruki Yokoyama, and Kohji Hohkawa, "Temperature dependence of surface acoustic wave characteristics of GaN layers on sapphire substrates", Japanese Journal of Applied Physics,  44 (18), pp. L564-L565 (2005).
  11. K. Saito, T. Ono, M. Shimada, N. Shigekawa, and T. Enoki, "Al/AlN/InP metal-insulator-semiconductor-diode characteristics with amorphous AlN films deposited by electron-cyclotron-resonance sputtering", Japanese Journal of Applied Physics, 44 (1A), pp. 334-342 (2005).
  12. Kazumi Nishimura, Naoteru Shigekawa, Haruki Yokoyama, Masanobu Hiroki, and Kohji Hohkawa, "SAW characteristics of GaN layers with surfaces exposed by dry etching",IEICE Electronics Express, 2 (19), pp. 501-505 (2005).
  13. Kenji Shiojima, Takashi Makimura, Tetsuya Suemitsu and Naoteru Shigekawa, "Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates", Japanese Journal of Applied Physics, 44 (12), pp. 8435-8440 (2005).
  14. K. Shiojima, T. Makimura, T. Kosugi, S. Sugitani, N. Shigekawa, H. Ishikawa, and T. Egawa, "High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates", IEE Electronics Letters, 40 (12), pp. 775-776 (2004).
  15. Kenji Shiojima and Naoteru Shigekawa, "Thermal stability of electrical properties in AlGaN/GaN heterostructures", Japanese Journal of Applied Physics,  43 (1), pp. 100-105 (2004).
  16. Kenji Shiojima, Suehiro Sugitani, and Naoteru Shigekawa, "Systematic study of thermal stability of AlGaN/GaN two-dimensional electron gas structure with SiN surface passivation",IEICE Electronics Express, 1 (7), 160 (2004).
  17. Naoteru Shigekawa, Kiyomitsu Onodera, and Kenji Shiojima, "Device temperature measurement of highly biased AlGaN/GaN high-electron-mobility transistors", Japenese Journal of Applied Physics, 42 (4B), pp. 2245-2249 (2003).
  18. Naoteru Shigekawa, Kenji Shiojima, and Tetsuya Suemitsu, "Optical study of high-biased AlGaN/GaN high-electron-mobility transistors", Journal of Applied Physics, 92 (1), pp. 531-535 (2002).
  19. Naoteru Shigekawa, Kenji Shiojima, and Tetsuya Suemitsu, "Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors", Applied Physics Letters, 79 (8), pp. 1196-1198 (2001).
  20. H. Kamitsuna, Y. Matsuoka, S. Yamahata, and N. Shigekawa, "Ultrahigh-speed InP/InGaAs DHPTs for OEMMICs",IEEE Transaction on Microwave Theory and Techniques, 49 (10), pp. 1921-1925 (2001).
  21. H. Kamitsuna, Y. Matsuoka, S. Yamahata, and N. Shigekawa, "Use of an InP/InGaAs double heterostructure phototransistor in a 40 GHz OEMMIC photoreceiver", Microwave Engineering Europe, 70, November issue, pp. 67-73 (2000).
  22. Kenji Shiojima, Naoteru Shigekawa, and Tetsuya Suemitsu, "Improved carrier confinement by a buried p-layer in the AlGaN/GaN HEMT structure",IEICE Transaction on Electronics, E83-C (12), pp.1968-1970 (2000).
  23. Naoteru Shigekawa, Tomofumi Furuta, Tetsuya Suemitsu and Yohtaro Umeda, "Optical Characterization of Impact Ionization in Flip-Chip-Bonded InP-Based High Electron Mobility Transistors", Japanese Journal of Applied Physics, 38 (10), pp. 5823-5828 (1999).
  24. Naoteru Shigekawa, Takatomo Enoki, Tomofumi Furuta, and Hiroshi Ito, "High-Energy and Recombination-Induced Electroluminescence of InAlAs/InGaAs HEMTs Lattice-Matched to InP Substrates",IEEE Transaction on Electron Devices, 44 (4), pp. 513-519 (1997).
  25. Naoteru Shigekawa, Takatomo Enoki and Tomofumi Furuta, "Electroluminescence from an InGaAs-Based High Electron Mobility Transistor Designed for High-Speed Operation", Japanese Journal of Applied Physics, 36 (7B), pp. L906-L908 (1997).
  26. H. Ito, S. Yamahata, N. Shigekawa, K. Kurishima,  "High fmax carbon-doped base InP/lnGaAs heterojunction bipolar transistors grown by MOCVD", Electronics Letters, 32 (15), pp. 1415-1416 (1996).
  27. Hiroshi Ito, Shoji Yamahata, Naoteru Shigekawa, Kenji Kurishima and Yutaka Matsuoka, "Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition",Japanese Journal of Applied Physics, 35 (6A), pp. 3343-3349 (1996).
  28. M. Ida, N. Shigekawa, T. Furuta, H. Ito, and T. Kobayashi, "Compositional change near the mask edge in selective InGaAs growth by low-temperature MOCVD", Journal of Crystal Growth, 158 (4), pp. 437-442, (1996).
  29. Hiroshi Ito, Shoji Yamahata, Naoteru Shigekawa and Kenji Kurishima, "Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition", Japanese Journal of Applied Physics, 35 (12A), pp. 6139-6144 (1996).
  30. N. Shigekawa, T. Enoki, T. Furuta, and H. Ito,  "Electroluminescence of InAlAs/InGaAs HEMTs lattice-matched to InP substrates", IEEE Electron Device Letters, 16 (11), pp. 515-517 (1995).
  31. H. Ito, S. Yamahata, N. Shigekawa, K. Kurishima, and Y. Matsuoka, "High-speed carbon-doped-base InP/InGaAs heterojunction bipolar transistors grown by MOCVD",Electronics Letters, 31 (24), pp. 2128-2130 (1995).
  32. N. Shigekawa, P. H. Beton, H. Buhmann, L. Eaves, M. Henini, and D. Johnston, "An (AlGa)As/GaAs heterojunction bipolar transistor with a resonant-tunnelling collector",Semiconductor Science and Technology, 9, pp. 1500-1503 (1994).
  33. Naoteru Shigekawa, Tomofumi Furuta, Kunihiro Arai, and Masaaki Tomizawa, "Photoluminescence study of undoped-like GaAs/AlGaAs quantum wells in high electric fields", Journal of Applied Physics, 74 (2), pp. 1188-1194 (1993).
  34. Naoteru Shigekawa, Tomofumi Furuta, Kunihiro Arai, and Masaaki Tomizawa,  "High-field electron velocity measurement in GaAs/AlGaAs multiple-quantum wells", Applied Physics Letters, 61 (13), pp. 1555-1557 (1992).
  35. Naoteru Shigekawa, Tomofumi Furuta, and Kunihiro Arai, "High-field electron-transport properties in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As double heterostructure", Journal of Applied Physics, 69 (7), pp. 4003-4010 (1991).
  36. Naoteru Shigekawa and Eiichi Yamaguchi, "A Monte Carlo Supercell Approach for the Effects of Disorder on the Upper-Valley Electronic Properties in InGaAs Ternary Alloys", Japanese Journal of Applied Physics, 30 (8A), pp. L1340-L1342 (1991).
  37. Naoteru Shigekawa, Tomofumi Furuta, Koichi Maezawa, and Takashi Mizutani, "Optically excited minority-electron velocity in selectively Be-doped AlGaAs/GaAs/AlGaAs single quantum wells", Applied Physics Letters, 56 (12), pp. 1146-1148 (1990).
  38. Naoteru Shigekawa, Tomofumi Furuta, and Kunihiro Arai, "Time-of-flight measurement of electron velocity in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As double heterostructure", Applied Physics Letters, 57 (1), pp. 67-69 (1990).
  39. Naoteru Shigekawa, Takashi Mizutani, and Kiyoyuki Yokoyama, "Effects of phonon confinement on electron transport in superlattices", Journal of Applied Physics, 65 (2), pp. 677-683 (1989).
  40. Naoteru Shigekawa, "Three-dimensional properties of conduction electrons in semiconductor superlattices", Solid-State Electronics, 32 (9), pp. 761-766 (1989).
  41. T. Furuta, N. Shigekawa, T. Mizutani, and A. Yoshii, "Time-of-flight measurement for electron velocity in p-AlGaAs/GaAs/AlGaAs at a high field", Applied Physics Letters, 55 (22), pp. 2310-2312 (1989).
  42. Yuji Ito, Naoteru Shigekawa, Mitsuo Harada, Kazuhiko Inoue, and Peter B?ni, "Studies of Constrained Dynamics of the Phase Transition in the Artificial Bilayer Membrane of Dialkyl Ammonium Amphiphile by Quasielastic Neutron Scattering", Journal of the Physical Society of Japan, 56 (6), pp. 2060-2069 (1987).